- Intshayelelo kwiiSeli
(1) Isishwankathelo:Iiseli ngamacandelo angundoqoukuveliswa kwamandla e-photovoltaic, kunye nendlela yabo yobugcisa kunye nenqanaba lenkqubo lichaphazela ngokuthe ngqo ukuveliswa kwamandla kunye nobomi benkonzo yeemodyuli ze-photovoltaic.Iiseli ze-Photovoltaic zikwindawo ephakathi kwikhonkco ye-photovoltaic industry.Ngamashiti acekethekileyo e-semiconductor anokuguqula amandla okukhanya kwelanga abe ngamandla ombane afunyenwe ngokusetyenzwa kwe-wafers yesilicon enye/eyikristale enye.
Umgaqo weukuveliswa kwamandla e-photovoltaicivela kwi-photoelectric effect ye-semiconductors.Ngokukhanyisa, umahluko onokubakho uveliswa phakathi kwamacandelo ahlukeneyo e-homogeneous semiconductors okanye i-semiconductors edityaniswe nesinyithi.Iguqulwa ukusuka kwiifotoni (amaza okukhanya) ukuya kwii-electron kunye namandla okukhanya kumandla ombane ukwenza amandla ombane.kunye nenkqubo yangoku.Iziqwenga ze-silicon eziveliswe kwikhonkco elinyukayo azikwazi ukuqhuba umbane, kwaye iiseli zelanga ezicutshungulwayo zigqiba amandla okuvelisa amandla kwiimodyuli ze-photovoltaic.
(2) Ukuhlelwa:Ngokombono wohlobo lwe-substrate, iiseli zinokwahlulwa zibe ziindidi ezimbini:Iiseli zohlobo lwe-P kunye neeseli zohlobo lwe-N.I-doping boron kwi-silicon crystals inokwenza i-P-type semiconductors;i-doping phosphorus inokwenza i-N-type semiconductors.Imathiriyeli ekrwada yohlobo lwebhetri ye-P yi-P-uhlobo lwe-silicon wafer (ifakwe nge-boron), kunye nemathiriyeli ekrwada yohlobo lwe-N-ibhetri yi-N-uhlobo lwe-silicon wafer (ifakwe nge-phosphorus).Iiseli zohlobo lwe-P ikakhulu ziquka i-BSF (i-aluminium yesiqhelo ye-back field cell) kunye ne-PERC (emitter egqithisiweyo kunye neseli yangasemva);Iiseli zohlobo lwe-N zezona teknoloji ziphambili ngokuTOPCon(i-tunneling oxide layer passivation contact) kunye ne-HJT (ifilimu encinci ye-Hetero junction).Ibhetri yohlobo lwe-N iqhuba umbane ngee-electron, kunye nokunciphisa ukukhanya okubangelwa yi-boron-oxygen atom pair incinci, ngoko ke ukuguqulwa kwe-photoelectric ukuguqulwa kuphezulu.
3. Ukwaziswa kwebhetri yePERC
(1) Isishwankathelo: Igama elipheleleyo lebhetri ye-PERC "yi-emitter kunye ne-back passivation battery", ephuma ngokwemvelo kwi-AL-BSF isakhiwo sebhetri ye-aluminium yesiqhelo yangasemva.Ukusuka kumbono wesakhiwo, ezi zimbini ziyafana, kwaye ibhetri ye-PERC inomaleko omnye wokudlula umva kunebhetri yeBSF (iteknoloji yebhetri yesizukulwana sangaphambili).Ukubunjwa kwe-stack passivation stack ivumela i-PERC iseli ukuba inciphise isantya sokuhlanganiswa kwendawo yangasemva ngelixa iphucula ukubonakaliswa kokukhanya kwendawo yangasemva kunye nokuphucula ukusebenza kakuhle kweseli.
(2) Imbali yoPhuhliso: Ukususela kwi-2015, iibhetri ze-PERC zasekhaya ziye zangena kwinqanaba lokukhula ngokukhawuleza.Ngo-2015, amandla okuvelisa ibhetri ye-PERC yasekhaya afikelele kwindawo yokuqala emhlabeni, ethatha i-35% yomthamo wemveliso yebhetri ye-PERC yehlabathi.Kwi-2016, i-"Photovoltaic Top Runner Programme" ephunyezwe yi-National Energy Administration ikhokelela ekuqaliseni ngokusemthethweni kokuveliswa kwemveliso yeeseli ze-PERC e-China, kunye nokusebenza okusemgangathweni kwe-20.5%.I-2017 yindawo yokuguqula isabelo semarike yeiiseli photovoltaic.Isabelo semarike yeeseli eziqhelekileyo saqala ukuhla.Isabelo semalike ye-PERC yasekhaya sinyuke saya kutsho kwi-15%, kwaye amandla ayo okuvelisa anyuke ukuya kuma-28.9GW;
Ukusukela ngo-2018, iibhetri ze-PERC ziye zaba zezona ziphambili kwintengiso.Ngo-2019, ukuveliswa kobunzima obukhulu beeseli ze-PERC kuya kukhawulezisa, kunye nokusebenza ngobuninzi be-22.3%, kubalwa ngaphezu kwe-50% yomthamo wemveliso, ukudlula ngokusemthethweni iiseli ze-BSF ukuze zibe yeyona nto iphambili ye-photovoltaic cell technology.Ngokutsho koqikelelo lwe-CPIA, ngo-2022, ukuveliswa kobuninzi beeseli ze-PERC kuya kufikelela kwi-23.3%, kwaye amandla okuvelisa aya kuphendula ngaphezu kwe-80%, kwaye isabelo semarike siya kuhlala sibeka kuqala.
4. TOPCon ibhetri
(1) Inkcazelo:TOPCon ibhetri, oko kukuthi, i-tunneling oxide layer passivation contact cell, ilungiswa ngasemva kwebhetri kunye ne-ultra-thin tunneling oxide layer kunye nomaleko we-polysilicon obhityileyo owenziwe kakhulu, othi kunye zenze isakhiwo soqhagamshelwano.Kwi-2013, yacetywa yiFraunhofer Institute eJamani.Xa kuthelekiswa neeseli ze-PERC, enye kukusebenzisa i-n-type silicon njenge-substrate.Xa kuthelekiswa neeseli ze-silicon zohlobo lwe-p, i-n-type i-silicon inobomi obude bokuthwala abancinci, ukusebenza kakuhle kokuguqulwa, kunye nokukhanya okubuthathaka.Okwesibini kukulungiselela i-passivation layer (i-ultra-thin silicon oxide i-SiO2 kunye ne-doped poly silicon ebhityileyo umaleko we-Poly-Si) ngasemva ukwenza ulwakhiwo lwe-passivation yoqhagamshelwano oluhlukanisa ngokupheleleyo ummandla owenziwe ngesinyithi, onokunciphisa ngakumbi umva. umphezulu.Ubuncinci bokuhlangana kwakhona phakathi komphezulu kunye nesinyithi kuphucula ukuguqulwa kwebhetri.
Ixesha lokuposa: Aug-29-2023